1/9 april 2005 n high voltage capability n low spread of dynamic parameters n minimum lot-to-lot spread for reliable operation n very high switching speed applications n compact fluorescent lamps (cfls) description the device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. it uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide rbsoa. the stbv series is designed for use in compact fluorescent lamps. figure 1: package figure 2: internal schematic diagram table 1: order codes table 2: absolute maximum ratings to-92 part number marking package packaging STBV32 STBV32-ap bv32 bv32 to-92 to-92 bulk ammopack symbol parameter value unit v ces collector-emitter voltage (v be = 0) 700 v v ceo collector-emitter voltage (i b = 0) 400 v v ebo emitter-base voltage (i c = 0, i b = 0.5 a, t p < 10 ms) v (br)ebo v i c collector current (f 100 hz, duty-cycle 50 %, t c = 25 o c) 1.5 a i cm collector peak current (t p < 5ms) 3a i b base current 0.5 a i bm base peak current (t p < 5ms) 1.5 a p tot total dissipation at t c = 25 o c 1.5 w STBV32 high voltage fast-switching npn power transistor rev. 2
STBV32 2/9 table 3: thermal data table 4: electrical characteristics (t case = 25 o c unless otherwise specified) * pulsed: pulsed duration = 300 s, duty cycle 1.5 %. t stg storage temperature -65 to 150 c t j max. operating junction temperature 150 c symbol parameter value unit r thj-case r thj-amb thermal resistance junction-case max thermal resistance junction-ambient max 83.3 112 o c/w o c/w symbol parameter test conditions min. typ. max. unit i cev collector cut-off current (v be = -1.5 v) v ce = 700 v v ce = 700 v t j =125 o c 1 5 ma ma v (br)ebo emitter-base breakdown voltage (i c = 0 ) i e = 10 ma 9 18 v v ceo(sus) * collector-emitter sustaining voltage (i b = 0 ) i c = 10 ma 400 v v ce(sat) * collector-emitter saturation voltage i c = 0.5 a i b = 100 ma i c = 1 a i b = 250 ma i c = 1.5 a i b = 500 ma 0.5 1 1.5 v v v v be(sat) * base-emitter saturation voltage i c = 0.5 a i b = 100 ma i c = 1 a i b = 250 ma 1.0 1.2 v v h fe dc current gain i c = 0.5 a v ce = 2 v i c = 1 a v ce = 2 v 8 5 35 25 t r t s t f resistive load rise time storage time fall time i c = 1 a v cc = 125 v i b1 = -i b2 = 200 ma t p = 25 s (see figure 12) 1 4 0.7 s s s t s inductive load storage time i c = 1 a v clamp = 300 v i b1 = 200 ma v be(off) = -5v l = 50 mh r bb = 0 (see figure 13) 0.8 s
STBV32 3/9 figure 3: safe operating area figure 4: output characteristics figure 5: base-emitter saturation voltage figure 6: derating curve figure 7: collector-emitter saturation voltage figure 8: dc current gain
STBV32 4/9 figure 9: dc current gain figure 10: reverse biased operating area figure 11: inductive load switching times
STBV32 5/9 figure 12: resistive load switching test circuit table 13: inductive load switching test circuit 1) fast electronic switch 2) non-inductive resistor 3) fast recovery rectifier 1) fast electronic switch 2) non-inductive resistor
STBV32 6/9 dim. mm. min. typ max. a 4.32 4.95 b 0.36 0.51 d 4.45 4.95 e 3.30 3.94 e 2.41 2.67 e1 1.14 1.40 l 12.70 15.49 r 2.16 2.41 s1 0.92 1.52 w 0.41 0.56 v5 o to-92 bulk shipment mechanical data 0102782 c
STBV32 7/9 dim. mm. min. typ max. a1 4.80 t 3.80 t1 1.60 t2 2.30 d 0.48 p0 12.50 12.70 12.90 p2 5.65 6.35 7.05 f1,f2 2.44 2.54 2.94 delta h -2.00 2.00 w 17.50 18.00 19.00 w0 5.70 6.00 6.30 w1 8.50 9.00 9.25 w2 0.50 h 18.50 20.50 h0 15.50 16.00 16.50 h1 25.00 d0 3.80 4.00 4.20 t 0.90 l 11.00 i1 3.00 delta p -1.00 1.00 to-92 ammopack shipment (suffix-ap) mechanical data
STBV32 8/9 figure 1: revision history version release date change designator 01-dec-2002 1 first release. 27-apr-2005 1 total dissipati on value has been modified.
STBV32 9/9 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered trademark of stmicroelectronics all other names are the property of their respective owners ? 2005 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com
|
